Germanium on Insulator (GeOI) Wafers

university wafer substrates

GeOSi Wafer Fabrication

A Phd from a physics of semiconductor materials lab requested the following quote:

I am interested in purchasing a few GeOSi wafers for research. My idea is to grow thick (~ 10 microns) Ge epitaxial layers on these substrates. Accordingly, the thickness of the Ge component of the GeOI is unimportant, but I am sensitive to surface quality and epi-readiness of the substrates. Please let me know if you can offer anything along the above lines.

We're experienced in supplying GeOSi wafer (by epi process),If you need GOI wafer,this has to be done by Bonding process,can you accept this ?

UniversityWafer, Inc. Quoted:

We can supply GeOSi wafer from 4'' to 8'',Pls see below for the offer on 6'' and 4'' GeOSi wafer for your reference

1. 150mm GeOSi Wafer,Prime grade
Wafer size: 150 mm
Material structure: Ge layer epitaxially deposited directly onto silicon substrate
Germanium thickness: ~10um
Ge layer surface roughness: Less than 1.5 nm based on a 10 um x 10 um AFM scan @ 2um Ge film
Dopant: Undoped < 5E15 atoms/cm3
Total Defect Dislocation (TDD): Less than 1E8/cm2

Silicon Substrate: Orientation (100)
Dopant type: P+ (Boron)
Resistivity: 1 -20 ohm-cm
Thickness: 650 ± 50 um
Polished Surface: Single front side epi polished
Surface roughness: <0.5nm
Packaging: 25-Cell,Vacuum Sealed,Opening directly for epi growth
Qty. 25pcs

2. 100mm GeOSi Wafer,Prime grade
Wafer size: 100 mm
Material structure: Ge layer epitaxially deposited directly onto silicon substrate
Germanium thickness: ~10um
Ge layer surface roughness: Less than 1.5 nm based on a 10 um x 10 um AFM scan @ 2um Ge film
Dopant: Undoped < 5E15 atoms/cm3
Total Defect Dislocation (TDD): Less than 1E8/cm2

Silicon Substrate: Orientation (100)
Dopant type: P+ (Boron)
Resistivity: 1 -20 ohm-cm
Thickness: 525 ± 25 um
Polished Surface: Single front side epi polished
Surface roughness: <0.5nm
Packaging: 25-Cell,Vacuum Sealed,Opening directly for epi growth
Qty. 25pcs

Reference #254883 for specs and pricing.

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GeOSi to Fabricate Quantum Computers

I'm looking for Germanium on Silicon wafers. Do you sell these and if you do, can you tell me the specs?

I am looking for crystalline germanium on silicon. Ideally I would like a 100mm (4-inch?) silicon wafer with a ~5 to 10 um layer of germanium (thicker layer would be acceptable). Depending on the price I would like to order between 4 and 10 wafers.  

Regarding the specs:

Si wafer:  100mm, P-type, <100>, thickness preferably ~525um

Ge layer: between 5-10 um thick, crystalline and uniform. I want to make a waveguide of this, so should not have to many defects. Preferably polished (but I might be able to do this myself)

I’m assuming there is some kind of layer between the Si and Ge (I’m guessing either an oxide layer or an amorphous Ge layer), which should not be too thick.

I do care about tensile strength of the Ge and Si, but I’m not sure what I can expect from this.

UniversityWafer, Inc. Quoted:

We can supply GeOSi wafer,it was fabricate from our SOS wafer foundry,good quality,Pls see below for our offer

Germanium on Silicon wafers,crystalline germanium on silicon
100mm (4-inch) silicon wafer with a ~5 to 10 um layer of germanium
Qty. 4 and 10 wafers.

Regarding the specs:
Si wafer: 100mm, P-type, <100>, thickness 525+/-25um,Resis. 1~20 Ohm.cm
Ge layer: ~5-10 um thick, good crystalline and uniform,un-polished
Buffer layer: Thin layer,between the Si and Ge (oxide layer or an amorphous Ge layer)

Reference #245401 for specs and pricing.

 

 

 

What are Germanium-on-Insulator (GeOSi) Used For?

A researchers requeste a quote:

Researcher:

We would be highly interested in buying GeOI wafers. Could you send us the specifications of the available GeOI wafers? 

We would need the following specs:

GeOI:

  • Ge device layer: 50 - 100 nm
  • BOX: 50 - 200 nm
  • Si handle wafer: 500 µm

We would like to buy 10 wafers (maybe more in the future).

UniversityWafer, Inc. Quoted:

GeOI Wafer
Ge device layer: 50 - 100 nm
BOX: 50 - 200 nm
Si handle wafer: 750~1000 µm ; highly p-doped
Qty. 10 wafers
$ usd/ea Please contact us for pricing.

Germanium on Silicon (GeOSi) Wafers to Fabricate Photodetectors

An electrical engineering student requested a quote for the following:

I am working on developing a process for my research group to fabricate photodetectors for the near IR spectrum on a wafer which can be used to fabricate conventional electrical devices as well.

I was wondering, do you have any wafers in stock with germanium deposited on silicon?  If not, is there some way that you can fabricate such a wafer for me?  Currently, we do not have the capability to do deposit germanium on silicon in our own facilities.

GeOSi Wafer Conventional Spec   

Size(inch) Orient. Si Resistivity Silicon Thick Surface Finish Ge film thick Type/Dopant Ge Layer Resis.
4'' <100> 1~20 Ohm.cm 525+/-25um P/E 0.5um+/-5% Un-doped > 30 Ohm.cm
4'' <100> 1~20 Ohm.cm 525+/-25um P/E 3.0um+/-5% Un-doped > 30 Ohm.cm
4'' <100> 1~20 Ohm.cm 525+/-25um P/E 1.0um+/-5% Un-doped > 30 Ohm.cm
4'' <100> 1~20 Ohm.cm 525+/-25um P/E 2.0um+/-5% Un-doped > 30 Ohm.cm
4'' <110> 1~20 Ohm.cm 525+/-25um P/E 2.0um+/-5% Un-doped > 30 Ohm.cm
4'' <111> 1~20 Ohm.cm 525+/-25um P/E 2.0um+/-5% Un-doped > 30 Ohm.cm
6'' <100> 1~20 Ohm.cm 675+/-25um P/E 1.0um+/-5% Un-doped > 30 Ohm.cm

Reference #93774 for pricing.