Characterization of Short-Range Order-in-Oxides

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Dry Thermal Oxide Used to Research Characterization of Short-Range Order-in-Oxides

Clients have used the following wafer spec for their characterization of Short-Range Order-in-Oxides research.

Dry Thermal SiO2
film thickness: 300nm
Diam: 100mm
Orientation: <100>
Grade : Prime
Dopingt: P or N type
Resistivity: 1-100 (ohm-cm)
Wafer thick: 500 um or less
Polish: SSP

Please let us know if you can use or if you have another spec that you would like us to quote.