Researchers Use of Doping Concentration for Schottky Detector Fabrication
A postdoc requested a quote for the following:
I am wondering if you can provide wafers with slightly n-doping Si layer (about 500nm) on heavily n-doping Si substrate?
Is it possible to control the resistivity of the top 500nm to be at least 1-10 Ohm*cm (doping concentration is no more than 1e16 cm-3) based on the published papers? This is the critical part for us to make a Schottky detector.
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What is Doping Concentration?
Doping concentration refers to the amount of impurity atoms intentionally added to a semiconductor material to modify its electrical properties. It is typically measured in units of atoms or molecules per cubic centimeter (cm^-3). The doping concentration can have a significant impact on the conductivity, resistivity, and other electronic characteristics of the material.
Why is Doping Conentration Important?
Doping concentration is important because it allows us to tailor the electrical properties of semiconductor materials to meet specific device requirements. By carefully controlling the concentration and type of dopant atoms, we can modify the conductivity and other electronic properties of the material. For example, adding a small amount of impurity atoms can turn an insulating material into a conductor, which is essential for making electronic devices such as transistors and diodes. The precise control of doping concentration is therefore critical for the design and fabrication of a wide range of electronic devices.
How do you Measure Doping Concentration?
There are several methods to measure doping concentration in semiconductor materials, including:
Hall effect measurement: This method measures the change in the electrical properties of the material in the presence of a magnetic field. By analyzing the Hall voltage and the magnetic field strength, it is possible to determine the carrier concentration and the type of carrier (electrons or holes).
Secondary ion mass spectrometry (SIMS): This technique uses a beam of high-energy ions to sputter material from the surface of the sample. By analyzing the mass and energy of the sputtered particles, it is possible to determine the type and concentration of dopants.
Capacitance-voltage (CV) measurement: This method uses the change in the capacitance of a metal-semiconductor junction with an applied voltage to determine the doping concentration.
Sheet resistance measurement: This method involves measuring the resistance of a thin film of the material to determine its sheet resistance, which is related to the doping concentration.
The choice of method depends on factors such as the type of dopant, the desired level of accuracy, and the characteristics of the material being analyzed.
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