Liquid Encapsulated Czochralsky (LED) Grown Gallium Arsenide

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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Liquid Encapsulated Czochralsky (LED) Grown GaAs

The process of GaAs production involves the growing of monocrystalline and polycrystalline Gallium Arsenide in PBN and High-purity quartz crucibles. We offer monocrystalline wafers and whole ingots with diameter from 2” up to 4“ with quality suitable for epitaxial processing and high-frequency and optoelectronic applications.

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