We have a large selection of large diameter GaN on Si wafers. Please let us know if you can use the following, or if you need another spec and quantity.
Silicon Diameter: 100m
Specs: P/B (111)
Thickness 975 micron
|P+||5nm||Mg doping 1E20cm-3|
|P-GaN||40nm||Mg doping 5E20cm-3|
|P-AlGaN||20nm||Mg doping 5E20cm-3|
|P-Gan||40nm||Mg doping 5E20cm-3|
|N-GaN||150nm||Si doping 1E18cm-3|
|N-GaN||1000nm||Si doping 5E18cm-3|
|Silicon Substrate (111) 975um|
Sapphire-Based LED GaN Epi structure Blue LED Wafer
Wafer Size： 100mm
Substrate： C-plane Sapphire (0001)
Substrate Thickness: 650 um
Silicon Carbide and Sapphire (Al2O3) substrates have and are currently used as a base material to make Light Emitting Diodes (LEDs). Both SiC and Al2O3 wafers are far more expensive than silicon wafers. This has slowed the adoption of LED lighting in residential and commercial lighting. UniversityWafer, Inc. now can grow Gallium Nitride (GaN) on lower-cost silicon wafers. Not only does the lower priced silicon save manufacturers on material costs, they can utilize the same semiconductor equipment used in current silicon wafer fabrication. This can save the fab a whopping 75% costs over Silicon Carbide and Sapphire.