Silicon-on-Nitride Wafers for Research & Production

university wafer substrates

Why Use Nitride on Silicon?

Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

Get Your SiN Quote FAST!


Which Nitride on Silicon Wafers Do I need?

Our team of engineers can help you with your SiN research needs. Just send us your specs!

Some of the nitride services that we provide.

Helping Researchers find the Right Silicon Nitride Spec

My research group requires a custom-made Nitride on Silicon wafer. Properties are as follows: Diameter: 100 mm Type : P Dopant: B Orientation: <100> Res(Ohm.cm): 1-10 Thickness: 500um Nitride Thickness: ~1000 A Oxide Thickness: >=10000 A The important part is having a thick Oxide layer between Silicon and Nitride layers which is as thick as 10000 A. The reason for making this layer such thick is electrical insulation. Actually, the thicker the oxide layer, the better for us. Is it possible to manufacture such wafers?

By the way, we are also open to suggestions for the mentioned insulating layer. If there is any other material to deposit between silicon and nitride layers that can provide electrical insulation, we would like to hear your suggestions.

UniversityWafer, Inc. Quoted:

Please contact us for pricing:

Custom-made Nitride on Silicon wafer
Properties are as follows:
Diameter: 100 mm
Type : P
Dopant: B
Orientation: <100>
Res(Ohm.cm): 1-10
Thickness: 500um
Nitride Thickness: ~1000 A
Oxide Thickness: >=10000 A (between Silicon and Nitride layers)

Silicon Nitride Wafers

Ask for the Nitride wafers that we have in stock.

Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.

Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.

Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.

Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: 600MPa Tensile
  • Refractive Index: 2.00
  • Temperature: 350C

Low Stress PECVD Nitride on Silicon

Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: <250MPa
  • Refractive Index: 2.00
  • Temperature: 350C

PECVD OxyNitride on Silicon

Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: Variable
  • Refractive Index: 1.5-1.9 (Per customer request)
  • Temperature: 350C

PECVD Oxide on Silicon

Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films.

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2µm
  • Tolerance: +/- 7% or better
  • Film Stress: 400MPa Compressive
  • Refractive Index: 1.46
  • Temperature: 350C

PECVD Silicon Carbide

PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films

  • Wafers Sizes up to 300mm
  • Capable of handling custom substrate shapes, sizes and materials
  • Thickness up to 2um
  • Tolerance: +/- 7% or better
  • Film Stress: <100MPa
  • Refractive Index: 2.73
  • Temperature: 350C