Zinc Telluride Substrates for Research & Development

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Zinc Telluride (ZnTe) Wafers

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ZnTe Single Crystal Substrates

10x10x0.5mm undoped N- type (110) DSP
1x1x1.0mm undoped N-type (110) DSP
10x10x1.0mm undoped P-type (100) SSP scratch/dig 60/40
10x10x0.5mm (100) N-type DSP
10x10x0.5mm Random orientation N-type DSP
10x10x0.5mm undoped P-type (100) DSP
10x10x0.5mm undoped P-type (100) DSP
10x10x1.0mm undoped N-type (110) DSP
10x10x1.0mm undoped N-type (110) DSP

ZnTe(110) with Dielectric Mirror Coating

R> 98% @ 1550+/- 50 nm, AOI=0 deg size: 1x1x0.5mm DSP
R> 98% @ 1550+/- 50 nm, AOI=0 deg size: 1x1x0.5mm DSP

A crystal of such material is subjected to a high-intensity light pulse of subpicosecond duration, it emits a pulse of terahertz frequency through a nonlinear optical process called optical rectification. Conversely, subjecting a zinc telluride crystal to terahertz radiation causes it to show optical birefringence and change the polarization of a transmitting light, making it an electro-optic detector. Zinc telluride, "ZnTe", is a non-linear optical photorefractive material of possible use in the protection of sensors at visible wavelengths. ZnTe optical limiters are light and compact, without complicated optics of conventional limiters. ZnTe can block a high-intensity jamming beam from a laser dazzler, while still passing the lower-intensity image of the observed scene. It can also be used in holographic interferometry, in reconfigurable optical interconnections, and in laser optical phase conjugation devices. It offers superior photorefractive performance at wavelengths between 600–1300 nm, in comparison with other III-V and II-VI compound semiconductors.