A researcher requested the following:
UniversityWafer, Inc. quoted the following:
single-crystal Aluminum Nitride (AlN) onto Silicon <111> substrates. 6-inch wafers,thickness of the AlN wafer is 1400 nm. Furthermore, 500 nm PECVD SiO2 capping layer on top
single-crystal Aluminum Nitride (AlN) onto Sapphire <0001> substrates. 6-inch wafers,thickness of the AlN wafer is 1400 nm. Furthermore, 500 nm PECVD SiO2 capping layer on top.
A researcher requested we help them with their research.
I am interested in GaN templates, AlN templates (if available), and hBN (if available).The goal is to grow 2D transition metal dichalcogenides and measure their electrical properties, so these templates need to be highly insulating with negligible electrical mobilities, so as no to contribute any spurious electrical signal to the 2D materials on top.
For semi insulating GaN templates, the typical specifications are as follows. Size = 2", Single crystal/highly epitaxial grown on cAl2O3, single side polished, resistivity > or ~ 10^6 ohm cm. Quantity = 1-2 pieces. (based on price per piece). Please tell me if Gallium polar or Nitrogen polar can be obtained.
For semi insulating AlN templates, the typical specifications are as follows. Size = 2", Single crystal/highly epitaxial grown on cAl2O3, single side polished. resistivity > 1 x 10^6 ohm cm. Quantity = 1-2 pieces. (based on price per piece). Please tell me if Aluminium polar or Nitrogen polar can be obtained.
For hBN, the typical specifications are as follows. Size = 10 mm x 10 mm pieces on SiO2/Si. Resistivity > 1 x 10^6 ohm cm. Quantity = 5-10 pieces (based on price per piece).
I am currently growing some 2D transition metal dichalcogenides (2d TMDC) based semiconductors on III Nitride templates such as GaN and AlN. My goal is to study if there is some clear epitaxial growth between these two different materials. While we have got some promising results for growth on GaN, we are still studying what happens when we try to grow on AlN. So that's why there is some delay on placing the orders. Once we have established that the 2D materials can be grown on onto these semiconductors, then i will go forward with the orders. I also see that u have graphene on SiO2/Si that also another substrate that i am keen on exploring with regards to 2D TMDC.
Can u please send me a quote for 2",4"wafer of AlN/Si? And also similar quotes for GaN/Si
UniversityWafer, Inc. Quoted the Following:
2" wafer of AlN/Si, Size = 2", Single crystal/highly epitaxial AlN grown on Silicon, single side polished. resistivity > 1 x 10^6 ohm cm. Quantity = 1 pieces. Aluminium polar,AlN layer 25nm
Please contact us for pricing. Reference #253427
UniversityWafer Inc of South Boston, MA, USA, along with its partners, has introduced a new line of 50.8mm, 100mm and 150mm UV-grade aluminium nitride (AlN) on c-plane single-side-polished (SSP) sapphire and AlN-on-silicon prime-grade for high-electron-mobility transistor (HEMT) templates.
A major use of AlN-on-sapphire are ultraviolet (UV) LEDs. Some of the most powerful applications include irradiating hospital rooms and foundry cleanrooms, since AlN-on-sapphire LEDs disinfect instruments and can purify air and water of germs and bacteria without using chemicals.
The electricity savings of using LEDs instead of traditional cold-cathode fluorescent lamps (CCFLs) can reach 70%. Also, unlike CCFLs, AlN LEDs do not contain mercury, allowing more environmentally friendly disposal. AlN LEDs can also be used for non-line-of-sight communications.
Currently, the newest-generation AlN-on-sapphire LEDs technology is approaching 50,000 hours of life, compared with just 10,000 hours for existing AlN-on-sapphire LEDs. The cost saving will only increase with time, adds the firm.
UniversityWafer says that it carries a large inventory of AlN-on-sapphire substrates, and can also quote unique client specs in small quantities that make it feasible for budget-strapped researchers to obtain the substrates at a reasonable cost. Delivery time is also short, notes the firm. UniversityWafer hence caters to researchers who want both small quantities and short lead-times, with staff trained to handle even the most difficult low-volume requests.
For production, AlN-on-sapphire can be ramped up to meet a client’s demands in a timely and affordable manner, UniversityWafer adds.
We also have a large selection of AlN on Silicon wafers. Recently a customer inquired:
Dia. 6‘’ 200nm thick AlN on Silicon wafer Surface roughness: <1nm