Gallium Nitride on Silicon Epitaxy Wafer

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Standard Epi-Wafer Characteristics

standare gan epitaxial substrate characteristics

 

150mm DesiGaN Power / RF HEMT Series

IGSS GaN 150mm DesiGaN Power/RF HEMT Series of Gallium Nitride on Silicon (GaN-on-Si) is an AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon(111) substrate targeting high voltage Power & RF applications.

FEATURES

  • High uniformity

  • Low leakage current

  • Higher operating temperatures

  • Excellent 2DEG characteristic

  • High breakdown voltage (600V-1200V)*

  • Lower ON-resistance*

  • Higher switching frequencies*

  • Higher operating frequencies (upto 18GHz)**

TYPICAL APPLICATION

  • *Power HEMT

  • *RF HEMT

  • *GaN Diode

gallium nitride cap structure

GaN on Silicon Specifications

Availaible in 100mm-200mm diameters.

TYPICAL WAFER WARP TYPICAL SHEET RESISTANCE TYPICAL ROUGHNESS
gallium  nitride on silicon wafer specifications