Germanium (Ge) on Silicon (Si) Wafers (GeOSi)

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What Is Germanium on Silicon Wafers Used for?

Since GeOSi has pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si is great for optoelectronic device applications. 

Germanium on Silicon (GeOSi) Wafers for Transistor Applications

Researchers have used the following ge substrate for their transistor applications.

High-quality Ge prime grade wafers from UniversityWafer, Inc:

1. 4" p-Ge wafers doping 1e18,thickness 525+/-5um SSP
2. 4" n-Ge wafers doping 1e18,thickness 525+/-5um SSP
3. Ge on Silicon (GeOSi) wafer doping 1e18 525+/-5um SSP
4. 4" SiO2 wafer (insulating substrate),Ro>10,000 ohm-cm,thickness 525+/-25um SSP SiO2 film 1000nm

GeOSi Wafer
Wafer size		100~200 mm
Material  structure		Ge layer epitaxially deposited directly onto silicon  substrate
Germanium  thickness		0.1~10um
Ge layer surface  roughness		Less than 1.5 nm based on a 10 um x 10 um AFM  scan
Dopant		Undoped < 5E15 atoms/cm3  (N or P-type doped also available)
Total Defect  Dislocation (TDD)		Less than 1E8/cm2
Silicon  Substrate		Orientation  (100) ; ( the <110>,<111> oriented also available)
Dopant type		P+ (Boron)
Resistivity		1 -20 ohm-cm
Thickness		650 ± 50  um
Polished Surface		Single front  side polished or Both sides polished available

Germanium (Ge) on Silicon (Si) Wafers 100mm, 150mm & 200mm

Below are just some of the GeOSi substrates that we have in stock. Buy as few as one wafer.

Inventory at bottom of this page!

Please inquire about pricing. Or send us your specs/qty for an immediate quote.

• 4" Undoped Ge on P/B Silicon Wafer,Ge layer 0.5um
  
• 4" Undoped Ge on P/B Silicon Wafer,Ge layer 3.0um
• 
  1. Delivery time : 1~2 week
  2. Valid term: 2 weeks
  3. Available item: 100mm, 150mm and 200mm Ge on Silicon available.
  
  
  Spec. 1# 2#
  
  100mm Ge-on-Si (GeOSi) Wafer,Prime grade
  Silicon Substrate:
  Wafer Diameter: 100+/-0.25mm
  Conduction/Dopant: P-type
  Orientation: <100>
  Thickness: 525+/-25um
  Resistance: 1~20 Ohm.cm
  Polish: Single side polished
  
  Ge Epi layer:
  Material structure: Ge layer epitaxially deposited directly onto silicon substrate
  Ge thickness: 3.0um +/- 5% or 0.5um +/- 5%
  Dopant: Un-doped
  Resistivity: > 30 Ohm.cm

1. Do custom GeOSi wafers upon request from 4'' ~ 8''
2. P/E : Single side polished
3. P/P : Both sides polished
4. TBD by qty.: Pricing According to the quantity
5. Wafer Grade: Prime grade
6. Ge Layer thickness: 0.1~10um

Germanium on Silicon Wafer Inventory

GeOSi Wafer Conventional Spec. Please send us the specs/qty that you would like us to quote.
Size(inch)	Orient.	Si Resistivity	Silicon Thick	Surface Finish	Ge film thick	Type/Dopant	Ge Layer Resis.
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	0.5um+/-5%	Un-doped	> 30 Ohm.cm
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	3.0um+/-5%	Un-doped	> 30 Ohm.cm
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	0.5um+/-5%	N-type doped	as request
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	0.5um+/-5%	P-type doped	as request
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	1.0um+/-5%	Un-doped	> 30 Ohm.cm
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	1.0um+/-5%	N-type doped	as request
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	1.0um+/-5%	P-type doped	as request
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	2.0um+/-5%	Un-doped	> 30 Ohm.cm
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	2.0um+/-5%	N-type doped	as request
4''	<100>	1~20 Ohm.cm	525+/-25um	P/E	2.0um+/-5%	P-type doped	as request
6''	<100>	1~20 Ohm.cm	675+/-25um	P/E	1.0um+/-5%	Un-doped	> 30 Ohm.cm
8''	<100>	1~20 Ohm.cm	725+/-25um	P/E	1.0um+/-5%	Un-doped	> 30 Ohm.cm

Do you have Ge film on insulator?

Client ask for a variety of specs. Below is a typical question and answer between the scientist and our engineers.

Researcher

Do you have Ge film on insulator?

UniversityWafer, Inc.

We might be able to help you, if you specify your requirements more precisely.

For us to quote, please answer the following:

1. When you say "film", is this a monocrystalline layer or can it be an amorphous or polycrystalline layer? {a monocrystalline layer we call an "Epi layer"). If you want a monocrystalline layer, then what is the crystalline orientation of the layer?
2. When you say "Insulator", do you mean material such as SiO2 or glass or fused quartz with resistivity >1E13 Ohmcm or Semi-Insulating material such as undoped GaAs or InP:Fe with resistivity > 1E6 Ohmcm ?
3. When you say "InGaAs", do you mean In(0.57)Ga(0.43)As which is lattice matched to InP ? Otherwise what alloy of the Indium and Gallium do you want?
   4. When you refer to "n- and p-doped materials", are you referring to the (100-200)nm film or to the substrate on which the film is deposited?
4. Do you want 4 pairs of wafers of both n-type and p-type "Films" for a total of16 wafers, or one n-type and one p-type wafer of each of the 4 substances, for a total of 8 wafers?