Heavily Doped Silicon Wafer for Research and Development

university wafer substrates

Researchers Using Heavily Doped Silicon

A Phd candidate requested a quote for the following:

Could you please let me know the price for 30 mm <100> wafers (heavily doped either P/B) with 2850 Angstroms oxide (Dry) thickness? And the minimum number that we can order. Thanks!

Reference #211189 for specs and pricing.

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Below are some of the specs in stock:

  • 50.8mm P(100) 0.001-0.005 ohm-cm SSP 280um Prime

  • 76.2mm P(100) 0.001-0.005 ohm-cm SSP 380um Prime

  • 100mm N/As(100) 0.001-0.005 ohm-cm SSP 500um Prime

  • 150mm P(100) 0.001-0.005 ohm-cm SSP 675um Prime

  • 200mm and 300mm heavily doped silicon also available

What are Heavily Doped Silicon Wafers Used For?

Heavily doped silicon wafers are used in various applications, including the following:

  1. Semiconductors: Heavily doped silicon wafers are used in the manufacture of semiconductors, which are the basis of modern electronics. The doping process involves adding impurities to the silicon material to alter its electrical properties. The resulting heavily doped silicon wafer is used as a substrate for the deposition of thin films of various materials, such as metals, oxides, and semiconductors, which are used to create electronic devices.

  2. Solar Cells: Heavily doped silicon wafers are used in the manufacture of solar cells. In this case, the doping process is used to create a p-n junction, which is the basis of solar cell operation. The p-n junction creates an electric field that separates the electrons and holes generated by the absorption of light, creating a current that can be used to generate electricity.

  3. Microelectromechanical systems (MEMS): Heavily doped silicon wafers are also used in the manufacture of microelectromechanical systems (MEMS), which are tiny mechanical devices that can be integrated with electronics. MEMS devices are used in a wide range of applications, including sensors, actuators, and microfluidic devices.

  4. Power Devices: Heavily doped silicon wafers are also used in the manufacture of power devices, such as high-voltage rectifiers, thyristors, and insulated-gate bipolar transistors (IGBTs). In these devices, the heavily doped silicon material is used to create a high-conductivity layer that can carry large currents.

Overall, heavily doped silicon wafers are a crucial component in a wide range of modern technologies, from electronics to renewable energy to medical devices.

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Used to increase performance of:

  • passive components, such as inductors
  • Substrate electrical isolation between the integrated digital
  • RF (radio frequency)
  • Analog components

What is Degenerately Doped Silicon?

We have heavily doped CZ less than 1 ohm-cm with 0.01-0.02 and 0.001-0.005 ohm-cm in stock at all times.

...the concept of a degenerately doped semiconductor is not a precise one. A degenerately doped semiconductor is one that is so heavily doped that it starts acting like a metal. A degenerately doped semiconductor is one with Nc<1E18/cc which corresponds to p-type Ro<0.040 or n-type Ro<0.020. UniversityWafer, Inc. considers degenerately doped Silicon to have Ro<0.020 Ohmcm

Reference #224057 for more.

Degenerately doped silicon is a type of heavily doped silicon in which the concentration of dopant atoms is so high that the semiconductor material exhibits unique electronic properties. Specifically, in degenerately doped silicon, the concentration of free charge carriers (i.e., electrons or holes) is much higher than the concentration of dopant atoms, resulting in a high carrier density and a high level of electrical conductivity.

The term "degenerate" is used to describe this situation because the energy levels of the charge carriers are so closely spaced that they essentially merge into a continuum, rather than being confined to discrete energy levels as in a non-degenerate semiconductor.

Degenerately doped silicon is used in a variety of electronic devices, such as high-frequency transistors, power diodes, and light-emitting diodes (LEDs). In these devices, the high carrier density and conductivity of degenerately doped silicon are critical for their operation.

The level of doping in a semiconductor is typically quantified using the doping concentration, which is defined as the number of dopant atoms per unit volume. Heavily doped silicon generally refers to a material with a high doping concentration, but it does not necessarily imply that the material is degenerately doped. In fact, degenerately doped silicon is typically considered a subset of heavily doped silicon, with a doping concentration that is several orders of magnitude higher than that of conventional heavily doped silicon.