Sapphire Epi Wafers for Research & Production

university wafer substrates

LED Grade Sapphire Wafers

Below are just some of our Sapphire Epi Polished wafers
we sapphire wafers online.

Sapphire Wafer- Dia OD= 50.8 mm ±.05 x H= 0.650 mm ±0.05 - Orient: C- Plane +/-2° - Grade: LED - Finish A: EPI Polished - Finish B: EPI Polished - Flat Location: No Flat
Pricing: ASK

Sapphire Wafer- Dia OD= 50.8 mm ±.05 x H= 0.850 mm ±0.05 - Orient: C- Plane +/-2° - Grade: LED - Finish A: EPI Polished - Finish B: EPI Polished - Flat Location: No Flat
Pricing: ASK

Sapphire Wafer- Dia OD= 101.6 mm ±.05 x H= 0.650 mm ±0.05 - Orient: C-Plane +/-2° - Grade: LED - Finish A: EPI Polished - Finish B: EPI
P olished - Flat Location: No Flat
Pricing: ASK

Sapphire Wafer- Dia OD= 101.6 mm ±.05 x H= 0.850 mm ±0.05 - Orient: C-Plane +/-2° - Grade: LED - Finish A: EPI Polished - Finish B: EPI
Polished - Flat Location: No Flat
Pricing: ASK

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Sapphire Wafer Inventory

Below are just some of the Sapphire Wafers up to 8 inches that we have in stock. Please let us know which item(s) you can use and the quantity for an immediate quote.

Dia (inch) Ori Thick Poli Qty Remarks Wafer Grade
2'' C-M 0.2deg 100+/-25um DSP 100 N/W Prime,Optical
2'' C-M 0.2deg 125+/-25um DSP 1575 N/W Prime,Optical
2'' C-M 0.2deg 175+/-25um DSP 3000 N/W Prime,Optical
2'' C-M 0.2deg 200+/-25um DSP 3000 N/W Prime,Optical
2'' C-M 0.2deg 250+/-25um DSP 75   Prime,Epi-ready
2'' C-M 0.2deg 275+/-25um DSP 269   Prime,Epi-ready
2'' C-M 0.2deg 300+/-25um DSP 264   Prime,Epi-ready
2'' C-M 0.2deg 330+/-25um SSP 155   Prime,Epi-ready
2'' C-M 0.2deg 330+/-25um DSP 685   Prime,Epi-ready
2'' C-M 0.2deg 400+/-25um DSP 356   Prime,Epi-ready
2'' C-M 0.2deg 430+/-25um SSP 125083   Prime,Epi-ready
2'' C-M 0.2deg 430+/-25um DSP 8709   Prime,Epi-ready
2'' C-M 0.2deg 500+/-25um 4SP 4   Prime,Epi-ready
2'' C-M 0.2deg 600+/-25um SSP 79   Prime,Epi-ready
2'' C-M 0.2deg 1000+/-25um SSP 25   Prime,Epi-ready
2'' C-M 0.2deg 5000+/-25um SSP 5   Prime,Optical
3'' C-M 0.2deg 200+/-25um DSP 37   Prime,Epi-ready
3'' C-M 0.2deg 300+/-25um DSP 37   Prime,Epi-ready
3'' C-M 0.2deg 430+/-15um DSP 15   Prime,Epi-ready
3'' C-M 0.2deg 500+/-25um SSP 206   Prime,Epi-ready
3'' C-M 0.2deg 500+/-25um DSP 185   Prime,Epi-ready
3'' C-M 0.2deg 550+/-25um DSP 213   Prime,Epi-ready
4'' C-M 0.2deg 300+/-25um SSP 125   Prime,Epi-ready
4'' C-M 0.2deg 300+/-25um DSP 125   Prime,Epi-ready
4'' 103mm C-M 0.2deg 400+/-25um SSP 13   Prime,Epi-ready
4'' C-M 0.2deg 400+/-25um DSP 125   Prime,Epi-ready
4'' C-M 0.2deg 500+/-25um SSP 1326   Prime,Epi-ready
4'' C-M 0.2deg 500+/-25um DSP 2511   Prime,Epi-ready
4'' C-M 0.2deg 625+/-25um SSP 25 Double Flat Prime,Epi-ready
4'' C-M 0.2deg 650+/-25um SSP 17175   Prime,Epi-ready
4'' C-M 0.2deg 650+/-25um DSP 4305   Prime,Epi-ready
4'' C-M 0.2deg 800+/-25um SSP 25   Prime,Epi-ready
4'' C-M 0.2deg 860+/-25um SSP 36   Prime,Epi-ready
4'' C-M 0.2deg 900+/-25um SSP 43   Prime,Epi-ready
4'' C-M 0.2deg 1000+/-25um SSP 25   Prime,Epi-ready
4'' C-A 2.0deg 1000+/-25um DSP 15 No Flat Prime,Epi-ready
4'' C-Plane+/-0.5deg 1000+/-25um DSP 7 On-axis,No Flat Prime,Epi-ready
6'' C-M 0.2deg 300+/-25um DSP 25    
6'' C-M 0.2deg 500+/-25um DSP 17    
6'' C-M 0.2deg 625+/-25um DSP 33    
6'' C-M 0.2deg 725+/-25um DSP 23    
6'' C-M 0.2deg 1000+/-25um SSP 2189   Prime,Epi-ready
6'' C-M 0.2deg 1000+/-25um DSP 1102   Prime,Epi-ready
6'' C-M 0.2deg 1300+/-25um SSP 579 SEMI NOTCH Prime,Epi-ready
6'' C-M 0.2deg 1300+/-25um DSP 186   Prime,Epi-ready
8'' C-Plane+/-0.5deg 725+/-25um DSP 7 SEMI Notch Prime,Epi-ready
8'' C-Plane+/-0.5deg 1000+/-25um DSP 10 SEMI Notch Prime,Epi-ready
8'' C-Plane+/-0.5deg 1250+/-25um DSP 12 SEMI Notch Prime,Epi-ready
8'' C-Plane+/-0.5deg 1500+/-100um DSP 9 SEMI Notch Prime,Epi-ready
8'' C-Plane+/-0.5deg 1000+/-30um DSP 22 N/S Prime,Epi-ready
8'' C-Plane+/-0.5deg 2000+/-30um DSP 39 As-cut  
8'' C-Plane+/-0.5deg 3000+/-30um DSP 46 As-cut  
8'' C-Plane+/-0.5deg 5000+/-30um DSP 18 As-cut  
2'' A-plane+/-0.3deg 430+/-25um SSP 335   Prime,Epi-ready
2'' A-plane+/-0.3deg 430+/-25um DSP 186   Prime,Epi-ready
4'' A-plane+/-0.5deg 500+/-25um SSP 34   Prime,Epi-ready
4'' A-plane+/-0.5deg 500+/-25um DSP 17   Prime,Epi-ready
2'' M-plane+/-0.3deg 430+/-25um SSP 413   Prime,Epi-ready
2'' M-plane+/-0.3deg 430+/-25um DSP 178   Prime,Epi-ready
4'' M-plane+/-0.5deg 500+/-25um SSP 40   Prime,Epi-ready
2'' R-plane+/-0.3deg 430+/-25um SSP 125   Prime,Epi-ready
2'' R-plane+/-0.3deg 430+/-25um DSP 120   Prime,Epi-ready
3'' R-plane+/-0.5deg 350+/-25um SSP 10   Prime,Epi-ready
3'' R-plane+/-0.5deg 500+/-25um SSP 50   Prime,Epi-ready
3'' R-plane+/-0.5deg 500+/-25um DSP 15   Prime,Epi-ready
4'' R-plane+/-0.5deg 460+/-25um SSP 65   Prime,Epi-ready
4'' R-plane+/-0.5deg 460+/-25um DSP 75   Prime,Epi-ready
4'' R-plane+/-0.5deg 500+/-25um DSP 60   Prime,Epi-ready
6'' R-plane+/-0.5deg 600+/-25um SSP 95 47.5+/-2.5mm Prime,Epi-ready
8'' R-plane+/-1.0deg 725+/-25um SSP 53 SEMI NOTCH As-cut Wafer
2'' PSS Wafer 430+/-25um SSP >30000   Prime,Epi-ready
4'' PSS Wafer 650+/-25um SSP >13000   Prime,Epi-ready
6'' PSS Wafer 1000/1300+/-25um SSP >6000   Prime,Epi-ready
2'' Nano-PSS Wafer 430+/-25um SSP 50   Prime,Epi-ready

What Are Sapphire Epi Wafers?

Sapphire epiwafers are manufactured by UniversityWafer, Inc. and our partners. These thin-film substrates are available in various sizes and orientations, from 1" to 6". They are used in microelectronics, LED and ultra-high-speed integrated circuits. Their electrical properties make them a preferred substrate material for semiconductor fabrication. Read on to learn about their benefits and how they can help you build your next semiconductor device.

We have sapphire wafers that are epi-polished and has a high purity. Its monocrystalline structure is 99.99% what does a sapphire epi wafer look likeAl2O3. It is used for III-V compound LED growth. The A-plane sapphire is primarily used for hybrid microelectronic applications. The C-plane sapphire is generally used for green and blue LEDs. The process of manufacturing epitaxial substrates makes them the preferred choice.

A sapphire epi-wafer is used for LED production. The surface roughness is reduced and TTV is better than two nanometers.

Our sapphire epi-polished substrates are monocrystalline, with high TTV. The substrates are ideal for growing LEDs. The PSS wafers can be grown with a variety of II-V compounds and III-V compounds. The A-plane sapphire is used for LEDs with a blue-green polarity, and the C-plane is used for red-green-green polarization.

The sapphire epi-wafer is a type of silicon wafer. It has the highest surface quality. The sapphire substrates are used to produce the most efficient LEDs. These devices are used for several applications and can even be found in a wide range of industries. If you're looking for a thin semiconductor, then the sapphire epi-wafer is what you're looking for.

The sapphire epi-wafer is the most common type of sapphire substrate. It is made from 99.99% pure sapphire and has a high surface TTV. It is a monocrystalline material that is useful for LEDs in LEDs. These wafers can be either round or square, and they range from 10x10mm to 150mm. They are commonly used in hybrid microelectronic applications, and are often highly effective in LEDs.

Sapphire epi-polished sapphire wafers are used in LED manufacturing. They are the most durable substrates available in the market and can be manufactured in smaller quantities. They can be custom-made in any size and can be manufactured in short lead times. These are also popular in HB-LED production. Aside from these benefits, Sapphire Epi-Wafers are widely used in a wide range of applications.

The high purity and TTV of sapphire wafers make them ideal for use in semiconductors. These epi-polished wafers are used extensively for HB-LEDs, because they have a very high defect density. They are a cost-effective option for manufacturing LEDs. You can even get very small batch sizes for your next project. There are several advantages to Sapphire epi-wafers.

Sapphire epi-Wafers are monocrystalline high-purity substrates that have one polished surface. The thin layer of silicon is very thin and is used in a wide range of applications. They are used in aerospace and optical-waveguide lasers. They are also extremely durable and resist heat and corrosion. You can use them in various products. It is also the most common substrate for GaN devices. It is a relatively cheap, mature technology.

As a result, sapphire is a unique material that is used in the manufacture of semiconductors. This type of technology is made possible by the fact that sapphire has many characteristics that make it an ideal choice for electronics. Because of this, it has been used in many industries since the beginning of the twentieth century. Typically, sapphire epi-wafers are 0.6 mm thick, making them one of the most versatile materials on the market.

Sapphire Epi Wafers Applications

Sapphire Epi Wafers are monocrystalline high-purity substrates. These substrates are highly resistant to heat epi sapphire wafer applicationsand have a highly polished surface. Sapphire Epi Wafers are the most commonly used substrate for GaN devices, and their affordability makes them attractive for a wide range of applications. Listed below are some of the most common applications of Sapphire Epi Wafers. Let's explore these applications in more detail. Also, keep reading for more tips and tricks for using Sapphire Epi Wafers.


There are two primary challenges for manufacturing HB-LEDs on large-diameter substrates - process-induced defect levels and wafer size. The process for growing sapphire with on-axis growth is ideal for LED applications because it results in a boule that is close to net shape. Moreover, c-axis CHES technology helps manufacturers overcome the problems associated with high defect levels and low material utilization, resulting in a near net-shaped boule. This technology is a highly effective solution for LED manufacturing and results in an average of seventy-five percent material utilization for large-diameter applications.

While the SEMI's HB-LED Wafer Task Force is advancing the HB-LED technology, the group is also working on further improving the HB1 standard. This project aims to improve the process-related specifications for high-brightness LEDs, including the detection of impurities and defects in sapphire wafers. Another objective is to improve the wafer defect inspection by introducing ultrasonic technology.

While advancing HB-LED technology, the process of growing GaN on sapphire has the advantage of reducing the density of dislocation defects in the GaN layer. During the LLO process, the GaN layer undergoes a bow-free transformation, which improves the optical extraction efficiency of HB-LEDs. The third advantage of the Sapphire-on-Si Epi Wafers process is the reduced manufacturing costs.

As the technology progresses, sapphire-based HB-LEDs are becoming more affordable. The sapphire substrate is much more expensive than individual steps in the LED fabrication process, but the advantages are far greater than the drawbacks. The sapphire substrate is a vital ingredient in achieving lower cost for LEDs. So, if the lighting industry is one of the most lucrative emerging markets for HB-LEDs, the technology could be a major benefit for consumers.

With a range of applications for HB-LEDs, sapphire epi wafers will enable manufacturers to reduce costs while improving yields. The process can also be optimized to meet high-quality demands in various fields, including solid-state lighting and LCD backlights. To develop the process for manufacturing sapphire epi-wafers, GT launched a comprehensive material characterisation project that analyzed the impact of different sapphire materials on LED yields.


In the microelectronics industry, Sapphire Epi Wafers are a valuable component of advanced electronics. The semiconductor industry relies on these materials for high-performance components. The demand for these materials has also increased because of the growing demand for energy-efficient LED lighting. Additionally, a growing focus on green technology and the need for low-power LED lights have spurred the growth of the Epi Wafer market globally.

This material has many desirable properties, including good thermal conductivity and electrical insulation. These properties make it a viable substrate material for LED and microelectronic applications. It is also a good choice for hybrid microelectronics because of its low dielectric loss and stable dielectric constant. Sapphire has a wide range of applications, ranging from semiconductors to LEDs and solar cells.

Sapphire Epi Wafers are monocrystalline, high-purity semiconductors that have a thin silicon layer on the surface. Sapphire Epi Wafers are used for a variety of applications, and are among the most durable and versatile substrates available. Regardless of the use, Sapphire Epi Wafers are the perfect substrate for microelectronics. They can also be ordered in small volumes, making them ideal for LED manufacturing.

When choosing the material for your applications, it is important to know how to assess the overall quality of the Sapphire Epi Wafers. The roughness of Sapphire Wafers is significantly less than that of Prime Silicon Wafers. The roughness of Sapphire Wafers is less than 0.1 micrometers in high-quality semiconductors. Additionally, sapphire is chemically resistant and transparent to ultraviolet radiation.

Various applications require different types of substrates. While C-plane substrates are used for general optics and lll-V compounds, the R-plane is often preferred for semiconductor applications. It is also useful for heteroepitaxial silicon deposition. Lastly, Sapphire Epi Wafers are important components of microelectronics. They offer many benefits to microelectronics manufacturers, including higher-performance semiconductors and enhanced thermal properties.

Another application for Sapphire Epi Wafers is in electric power control. They help regulate device energy consumption by electronically insulate a fine monocrystalline silicon layer. They also increase transistor switching speed and breakdown voltage. Epitaxial wafers have a crystalline structure and provide better physical properties. The process is called homoepitaxy. Homoepitaxy ensures that the material grown on the substrate matches the characteristics of the epitaxial structure.


In this paper, we discuss the potential of Sapphire Epi Wafers for use in LEDs and their photovoltaic applications. By using this material, we will be able to create LEDs with better light extraction efficiency. Since the interface between sapphire and LEDs is nonplanar, we can create better LEDs. This paper also reveals the advantages of Sapphire Epi Wafers for other applications, such as medical imaging and biomedical devices.

Inseto specializes in manufacturing the Kr grown Sapphire wafer, which is a great material for semiconductors. It is known for its high purity, flatness, and excellent TTV. It can be manufactured in sizes ranging from 2" to 150 mm, with a short lead time. Small lot sizes are also available. These materials are extensively used in the production of HB-LEDs. They also have low stress layers and high resistance to thermal shock.

In addition to LED epi wafers, San'an is also engaged in the manufacture of full-color ultrahigh-brightness LEDs. Its products also include PIN photoelectric detector chips, which are widely used in intelligent family life. Its investment has grown exponentially. It has a higher share in the market. The company also plans to invest in the production of advanced Sapphire Epi Wafers.

High-quality h-BN films can be grown on Sapphire Epi Wafers without the use of a catalyst. A PLD technique was used to grow the material. The optimal growth parameters were determined and compared for the most favorable crystalline properties. The maximum pressure decreased with increasing distance between the substrate and target, which is in accordance with the scaling law of PD2 = constant. However, the substrate temperature exerted the greatest influence on the quality of the crystalline films.

Although semiconductor chips and lasers are the most popular uses of Sapphire Epi Wafers, there are numerous other applications for Sapphire. Its high-temperature resistance makes it the ideal choice for LED lighting. It also has excellent electrical insulation and low dielectric loss, making it an ideal substrate for LED lighting. In addition to LED lighting, Sapphire Epi Wafers are also used as fiber guide plates in the textile industry and in the manufacture of bar code scanner windows and watch covers.

Other Sapphire Applications

Other Sapphire Epi Wafers are fabricated by combining a silicon layer onto an R-plane (1102) sapphire wafer. They feature tight dimensional control and excellent flatness values. They are suitable for high-frequency devices and are highly resistant to radiation. In addition to these properties, they exhibit excellent electrical conductivity over a wide temperature range. Here are some applications of these wafers. Listed below are some of the main ones.

Other Sapphire Epi Wafers are primarily used for the manufacture of crystals and in semiconductor devices. They are also used in optics and windows. These sapphire materials are highly durable and have many properties that make them ideal for high-temperature applications. Their hexagonal/rhombohedral structure provides excellent electrical characteristics and excellent radiation resistance. It is often fabricated into high-precision shapes for instruments and other high-temperature applications.

Various applications are possible for sapphire wafers. Optical devices are one of the most common. They feature excellent optical and thermal properties. This type of semiconductor device is also known as a-plane sapphire. Despite being relatively expensive, it has a high market share. Moreover, the manufacturing technology for sapphire substrates is quite advanced. Companies like Rubicon have successfully demonstrated the manufacture of 12" diameter sapphire substrates. In addition to improving the manufacturing process, hydride-vapor phase epitaxy is also expected to bring down the costs.

As an epitaxial semiconductor device, sapphire epiwafers are used in many electronic applications. The main difficulty in silicon on sapphire growth is lattice mismatch, which causes structural defects in the transition from substrate to layer. Epiel's proprietary technology has solved this problem and produced low-defect monocrystalline doped layers. Moreover, epiwafers are available in 100, 150, and 76 mm sizes.

LED growth on sapphire substrates is an important application. Due to the high quality factor of sapphire epitaxial films, these thin films have potential in quantum computing. Improvement in the quality of thin film crystal and elimination of pinholes and voids will improve the quality factor of sapphire epitaxial films. In addition, the epitaxial aluminum films grown on sapphire by sputter beam epitaxy have high surface smoothness and interface sharpness. The study also investigates the effects of substrate preparation and growth temperature on sapphire wafers.