Silicon Carbide (SiC) Substrate for Research & Production

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Silicon Carbide (SiC) Wafers

Save and buy diced SiC wafers. In stock for an excellent price!

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Silicon Carbide (SiC) Wafers

Save and buy diced SiC wafers. In stock for an excellent price!

5x5mm, 6x6mm, 10x10mm 6H wafers and 5x5, 10x10, and 2" diameter 4H wafers in stock.

All of these SiC wafers are N-type, resistivity ~0.1-0.01 Ohm.cm

For 4H SSPwafer 10x10mm and 5x5mm

For 6H SSP wafer 10x10mm and 5x5mm

Below are just some SiC substrates available. Let us know what specs you can use or send us your own specs and quantity.

No.1

2" 6H N-Type

6H-N 2" dia,

Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2   D Grade,RT:0.02-0.2 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.2

2" 6H N-Type

6H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2  B Grade,RT 0.02 ~ 0.2 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.3

2" 4H N-Type

4H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2 D Grade:RT:0.01-0.1 Ω·cm                   D Grade,Bow/Warp/TTV<25um

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.4

2" 4H N-Type

4H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2  B Grade:RT:0.01 - 0.1 Ω·cm                  B Grade,Bow/Warp/TTV<25um

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.5

3" 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen

Orientation :4 degree+/-0.5 degree

Thickness : 350 ± 25 um

D Grade,MPDä100 cm-2  D Grade,RT:0.01-0.1Ω·cm 
D Grade,Bow/Warp/TTV<35um

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.6

3" 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen

Orientation : 4 degree+/-0.5 degree

Thickness : 350 ± 25 um

B Grade,MPDä30 cm-2    B Grade,RT:0.01 - 0.1Ω·cm 
B Grade,Bow/Warp/TTV<35um

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.7

3" 4H SI

4H-SI 3" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 350 ± 25 um

D Grade,MPDä100 cm-2 

D Grade,RT:70 % ≥1E5 Ω·cm

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.8

3" 4H SI

4H-SI 3" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 350 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:80 % ≥1E5 Ω·cm

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.9

2" 6H SI

6H-SI 2" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.10

2" 6H SI

6H-SI 2" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:85 % ≥1E5 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

No.11

4" 4H N-Type

4H-N 4"dia.(100mm±0.38mm),

Type/ Dopant : N / Nitrogen

Orientation : 4.0°±0.5°

Thickness : 350μm±25μm

D Grade,MPDä100 cm-2  

D Grade,0.01~0.1Ω•cm                        

D Grade,TTV/Bow /Warp<45um

 Double face polished/Si face epi-ready with CMP, Surface Roughness: <0.5 nm

Below are just some of our Silicon Carbide Wafers

Electronic devices made from Silicon carbide (SiC) wafers can operate at a high power, high heat and deadly doses of radiation than traditional silicon.

SiC Wafer Applications Include:

  • Jet Engines where extreme heat is a problem for silicon.
  • Wireless chips
  • Radar
  • Smart devices for autos

Silicon Carbide Electric Vehicle Applications

Silicon carbide has several benefits, making it a perfect choice for high-performance electric vehicle applications. In short, it has a wider bandgap than silicon, enabling it to handle higher voltages without degrading. In addition, silicon carbide is cheaper to operate than silicon. If these attributes are important to you, then you should consider purchasing a silicon carbide electric vehicle. Here's a closer look at this exciting material.

Silicon Carbide Can Discharge Larges Amounts of Energy

The future of the electric vehicle depends on the ability to store and discharge large amounts of energy. But SiC is not limited to EVs. It is also used in clean-energy devices, ubiquitous HVAC systems, and industrial motors. SiC is more efficient than silicon and helps reduce heat and losses. The market for silicon carbide is projected to grow at double-digit rates between 2019 and 2026. And while SiC may not yet be a viable replacement for the battery of an EV, it is poised to become a key technology for EVs.

While silicon is a better material for the battery in electric vehicles, it is more expensive. This is one reason why silicon carbide is more expensive. It is difficult to produce SiC, and is expensive. However, it can be made more efficient than silicon. The difference is about six percent. SiC has an advantage over silicon because it has higher operating temperatures and can squeeze out more energy. It can be used in electric vehicle batteries with large capacities.

Silicon Carbide Has a Wider Bandgap

The Silicon Carbide semiconductor is a great choice for battery and inverter applications for electric vehicles. It is a low-emissions, wide-bandgap semiconductor. There are some challenges associated with its use in electric vehicles, though. While SiC's bandgap is larger than Gallium Nitride (GaN's), it's still a good candidate for automotive applications. However, as the technology advances and is more widely used, the automotive industry may be forced to make some decisions.

Wider bandgap semiconductor materials have many advantages over Si. The bandgap is the amount of energy a semiconductor can store or release in a certain temperature range. The higher the bandgap, the lower the breakdown voltage. For this reason, SiC is often used for automotive applications, where a high voltage is required. It also exhibits a self-biasing feature when overvoltage is detected.

Silicon Carbide is Cheaper to Operate than Silicon

Silicon carbide is an excellent material for controlling electric current. It has a wide band gap that allows electrons to flow freely and presents less resistance in conducting mode. This can translate to greater power from a battery. Silicon carbide's high-performance properties can also be applied to solar and wind power systems, industrial motors, and HVAC systems. The next step for silicon carbide is electric vehicle applications.

Because SiC is so durable and cheap to make, automakers and Tier-1 suppliers are now using it to build and operate higher-voltage batteries. SiC will save automakers and Tier-1 suppliers up to $750 per unit. This material is now cheaper to operate than other materials and is expected to grow in the coming years. Silicon carbide has a double-digit compound annual growth rate over the next two to three years.

Silicon Carbide Can Withstand Higher Voltages

The latest breakthrough in silicon semiconductor technology is an electrical component that can withstand higher voltages and higher temperatures. Silicon carbide devices have been undergoing research for automotive powertrain applications. They differ from silicon in several ways, including their electrical properties and thermal conductivity. SiC is suited to higher voltages, can operate at higher temperatures, and can be cooled more efficiently. SiC also has higher energy efficiency.

The advantages of silicon carbide in electric vehicle applications go beyond EVs, however. The market for this material is much larger than EVs, and encompasses numerous clean-energy devices and ubiquitous HVAC systems. Industrial motors are an example of these, as they run 24/7 and are often much larger than automotive motors. The higher voltages that SiC can withstand make them a superior conductor.

Video: Charge Electric Vehicles with SiC