Silicon Carbide (SiC) Substrate for Research & Production

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

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Silicon Carbide (SiC) Wafers

Save and buy diced SiC wafers. In stock for an excellent price!

5x5mm, 6x6mm, 10x10mm 6H wafers and 5x5, 10x10, and 2" diameter 4H wafers in stock.

All of these SiC wafers are N-type, resistivity ~0.1-0.01 Ohm.cm

For 4H 1sp wafer, price is $320/each for 10x10 pcs, $160/each for 5x5 pcs,

For 6H 1sp wafer, price is $265/each for 10x10 pcs, $165/each for 5x5 pcs,

 

Below are just some of our Silicon Carbide Wafers

Electronic devices made from Silicon carbide (SiC) wafers can operate at a high power, high heat and deadly doses of radiation than traditional silicon.

SiC Wafer Applications Include:

  • Jet Engines where extreme heat is a problem for silicon.
  • Wireless chips
  • Radar
  • Smart devices for autos

Below are just some SiC substrates available. Let us know what specs you can use or send us your own specs and quantity.

No.1

2" 6H N-Type

6H-N 2" dia,

Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:0.02-0.2 Ω·cm

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      327.80

No.2

2" 6H N-Type

6H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT 0.02 ~ 0.2 Ω·cm

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      454.45

No.3

2" 4H N-Type

4H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                       D Grade:RT:0.01-0.1 Ω·cm                   D Grade,Bow/Warp/TTV<25um

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      327.80

No.4

2" 4H N-Type

4H-N 2" dia, Type/ Dopant : N / Nitrogen

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                           B Grade:RT:0.01 - 0.1 Ω·cm                  B Grade,Bow/Warp/TTV<25um

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      454.45

No.5

3" 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen

Orientation :4 degree+/-0.5 degree

Thickness : 350 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:0.01-0.1Ω·cm                    D Grade,Bow/Warp/TTV<35um

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      573.65

No.6

3" 4H N-Type

4H-N 3" dia, Type/ Dopant : N / Nitrogen

Orientation : 4 degree+/-0.5 degree

Thickness : 350 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:0.01 - 0.1Ω·cm                   B Grade,Bow/Warp/TTV<35um

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      864.20

No.7

3" 4H SI

4H-SI 3" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 350 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

4-10pcs

 $      849.30

No.8

3" 4H SI

4H-SI 3" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 350 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:80 % ≥1E5 Ω·cm

 

Double face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

4-10pcs

 $   2,354.20

No.9

2" 6H SI

6H-SI 2" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

D Grade,MPDä100 cm-2                      D Grade,RT:70 % ≥1E5 Ω·cm

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

6-10pcs

 $      573.65

No.10

2" 6H SI

6H-SI 2" dia, Type/ Dopant : Semi-insulating / V

Orientation : <0001>+/-0.5 degree

Thickness : 330 ± 25 um

B Grade,MPDä30 cm-2                       B Grade,RT:85 % ≥1E5 Ω·cm

 

Single face polished/Si face epi-ready with CMP,Surface Roughness : <0.5 nm

5-10pcs

 $   1,132.40

No.11

4" 4H N-Type

4H-N 4"dia.(100mm±0.38mm),

Type/ Dopant : N / Nitrogen

Orientation : 4.0°±0.5°

Thickness : 350μm±25μm

D Grade,MPDä100 cm-2                      D Grade,0.01~0.1Ω•cm                         D Grade,TTV/Bow /Warp<45um

 

Double face polished/Si face epi-ready with CMP, Surface Roughness : <0.5 nm

<4pcs

 $   1,005.75

 

 

 

>=4pcs

 $      923.80

 

 

 

>=10pcs

 $      879.10