What GaAs Wafer Specifications are Used for Sum Frequency Generation?
Researchers performing sum frequency generation (SFG), nonlinear optics, and ultrafast laser spectroscopy frequently require high-quality gallium arsenide (GaAs) wafers with precise crystal orientations, low surface roughness, and excellent optical properties. GaAs substrates are widely used in photonics and spectroscopy because of their direct bandgap, high electron mobility, and strong interaction with infrared and visible laser wavelengths.
A postdoctoral researcher in chemistry requested a custom GaAs wafer quote for use in a sum frequency generation spectrometer:
For this application I need a GaAs wafer with (110) orientation, approximately 2 inches in diameter, and undoped. The wafer thickness is not critical because the primary concern is the interaction of infrared and visible laser beams with the GaAs surface.
I am also interested in understanding whether surface polishing would chemically affect the wafer surface used for spectroscopy measurements. Would it be possible to supply two GaAs wafers meeting these specifications? Please let me know pricing and estimated lead time.
Researchers performing nonlinear optical experiments often select semi-insulating GaAs wafers with polished or epi-ready surfaces to improve laser beam interaction, optical reflectivity, and signal consistency during spectroscopy measurements.
For advanced optics applications, scientists frequently request:
- 110 oriented GaAs wafers
- Undoped or semi-insulating substrates
- Low surface roughness for optical experiments
- Epi-ready polished surfaces
- High reflectivity semiconductor substrates
- Infrared and visible wavelength compatibility
High-quality CMP polished GaAs wafers are commonly used in photonics research, semiconductor laser systems, optical frequency conversion, femtosecond laser optics, and nonlinear spectroscopy applications.
Reference #169779 for specs and pricing.
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GaAs Wafers for Sum Frequency Generation Research
Researchers using gallium arsenide (GaAs) wafers for sum frequency generation (SFG), nonlinear optics, and ultrafast laser spectroscopy often require precise crystal orientations, smooth surface finishes, and high optical reflectivity. Semi-insulating GaAs substrates are widely used in optical frequency conversion experiments because of their favorable electronic and nonlinear optical properties.
A research professor working in chemistry requested a custom GaAs wafer with the following specifications for spectroscopy applications:
I am looking for a 110 gallium arsenide wafer. A diameter of 1 or 2 inches is sufficient and ideally thin, approximately 350 µm. I only need one wafer and plan to use it as a reference substrate for sum frequency generation experiments.
Question: What is the surface roughness of the GaAs wafer?
Answer: The polished surface roughness of GaAs wafers is controlled through repeated chemical mechanical polishing (CMP) processing. Typical RMS surface roughness values are less than 2 nm for epi-ready polished wafers. Ultra-smooth semiconductor surfaces are critical for minimizing optical scattering and improving nonlinear optical signal generation in laser spectroscopy systems.
Researchers performing optical characterization often select low surface roughness wafers to improve beam stability, reflectivity, and laser interaction efficiency during nonlinear optical experiments.
Reference #257441 for specs and quantity.
GaAs Reflectivity for Sum Frequency Signal Generation
A physics researcher requested a GaAs wafer optimized for laser reflectivity and nonlinear optical frequency mixing applications.
My goal is to increase reflectivity from the GaAs wafer for 650 nm light at an incident angle of 60 degrees. The reflected beam must propagate in the same direction as the generated sum-frequency signal.
Using Fresnel equations, I calculated approximately 58% reflectivity for the incident S-polarized light. Would it be possible to apply an optical coating to significantly improve reflectivity at 650 nm while reducing reflectivity beyond 700 nm?
Three separate laser beams will be focused onto the GaAs wafer surface. One beam must be reflected while the other beams generate the nonlinear optical sum-frequency signal.
GaAs wafers are commonly used in nonlinear optics, laser reflectivity experiments, and optical frequency mixing because of their direct bandgap, high electron mobility, and favorable optical response in infrared and visible wavelength ranges. Researchers may also apply dielectric coatings or reflective thin films to optimize wavelength-specific reflectivity for spectroscopy systems.
Reference #90867 for specs and pricing.
Recommended GaAs Wafer Specifications for SFG Spectroscopy
Scientists performing sum frequency generation spectroscopy, ultrafast optics, and femtosecond laser research frequently request semi-insulating GaAs wafers with the following characteristics:
| Property |
Typical Specification |
| Material |
Gallium Arsenide (GaAs) |
| Orientation |
(110) |
| Doping |
Undoped / Semi-Insulating |
| Thickness |
350 µm |
| Surface Finish |
SSP / DSP / Epi-Ready |
| Applications |
SFG Spectroscopy, Nonlinear Optics, Laser Reflectivity |
Scientists have used the following GaAs wafer for spectroscopy and nonlinear optical research:
GaAs Item #7259
50.8 mm Undoped Semi-Insulating GaAs [110], 350 µm thick, SSP polished, Epi-Ready surface, low defect density, and optimized for advanced semiconductor and photonics research.
What is Sum Frequency Generation?
Sum Frequency Generation (SFG) is a nonlinear optical process in which two laser beams with different frequencies interact within a nonlinear material to generate a third beam whose frequency equals the sum of the two input frequencies. This optical frequency conversion technique is widely used in surface spectroscopy, ultrafast laser systems, semiconductor characterization, and photonics research.
In SFG spectroscopy, high-quality semiconductor substrates such as gallium arsenide wafers are selected because of their strong optical response, excellent crystal quality, and compatibility with infrared and visible laser systems. The crystal orientation, surface polish quality, and optical reflectivity of the wafer directly affect signal intensity and experimental accuracy.
GaAs is a III-V compound semiconductor known for its high electron mobility, direct bandgap, and efficient interaction with electromagnetic radiation. These properties make GaAs substrates useful for photonics, semiconductor lasers, terahertz devices, optical modulators, and nonlinear optical frequency conversion systems.
Researchers working in femtosecond laser optics and nonlinear spectroscopy frequently compare GaAs with other advanced optical materials such as ZnSe, single crystal quartz, and sapphire wafers depending on wavelength range, optical transparency, and nonlinear coefficient requirements.
The ability of GaAs to support efficient nonlinear optical interactions makes it valuable for advanced spectroscopy systems, optical sensing, and semiconductor laser applications where precise wavelength generation and beam control are required.
