Sapphire Wafers for Epitaxial Growth
An electrical engineer requested a quote for the following.
We have previously purchased sapphire substrates for epitaxial growth from you and were very happy with them. We are currently looking at the thermal properties of our grown layers and need to know the values of thermal conductivity (normal to the surface plane, i.e. cross-plane thermal conductivity), heat capacity, and density of those substrates as accurately as possible. The substrates were 2 inch single- or double-side polished c-plane <0001> Al2O3 and m-plane <10-10> Al2O3. If you could provide this information we would be very grateful.
Reference #267313 for specs and pricing.
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Gallium Nitride on Silicon Epitaxy Substrates
An associate professor requested a quote for the following.
I m interested in GaN on Silicon Epitaxy Wafer 4" - 8" available
IGSS GaN 150mm DesiGaN Power/RF HEMT Series of Gallium Nitride on Silicon (GaN-on-Si) is an AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon(111) substrate targeting high voltage Power & RF applications.
Excellent 2DEG characteristic
High breakdown voltage (600V-1200V)*
do you have the specifications for these layers (thickness, doping etc ...) and their characteristics
I am also looking for GaN with very low dislocation rates
Reference #250010 for specs and pricing.
Epitaxy in Semiconductor Manufacturing
Overview
Epitaxy is a process used in semiconductor fabrication to deposit monocrystalline films on a substrate, ensuring that the crystallinity and orientation of the grown layer match that of the substrate. This technique is crucial for creating advanced transistors, memories, and other semiconductor devices.
Types of Epitaxy
- Homoepitaxy: The growth of a crystalline layer on a substrate of the same material, such as silicon on silicon.
- Heteroepitaxy: The growth of a crystalline layer on a substrate of a different material, like gallium arsenide on silicon.
Applications
Epitaxy is utilized in various semiconductor processes, including the manufacturing of bipolar junction transistors (BJTs) and modern complementary metal–oxide–semiconductors (CMOS). It's particularly important for compound semiconductors such as gallium arsenide.