Indium Gallium Phosphide (InGaP)

InGaP is a critical III-V semiconductor used in advanced optoelectronics and high-efficiency photovoltaics. UniversityWafer, Inc. specializes in depositing high-quality InGaP epi layers onto compatible GaAs wafers to meet your research or production needs.

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Bulk InGaP substrates are extremely rare and expensive. The industry standard is to grow InGaP Epitaxy on GaAs or GaP substrates. We can help you configure the correct epi-stack for your device.





Related Materials

Why use InGaP on GaAs?

InGaP is a ternary compound semiconductor composed of Indium, Gallium, and Phosphorus. It is favored over AlGaAs in many applications because it has a lower surface recombination velocity and is less prone to oxidation.

The primary advantage of InGaP is that its lattice constant can be matched perfectly to Gallium Arsenide (GaAs). This allows for the growth of high-quality epitaxial layers without defects, essential for high-performance devices.

InGaP/GaAs Heterojunction Bipolar Transistors (HBTs)

InGaP/GaAs HBTs are the backbone of modern power amplifiers in mobile phones and wireless communications. InGaP offers a larger valence band discontinuity compared to AlGaAs, which improves current gain and thermal stability.

High-Efficiency Photovoltaics

InGaP is a crucial material in multi-junction solar cells. In a typical triple-junction cell, InGaP forms the top layer because it has a wide bandgap (approx. 1.8 eV to 1.9 eV) capable of absorbing high-energy photons.

Benefits in Solar Applications:

  • Radiation Resistance: InGaP is highly resistant to radiation, making it the material of choice for space-based solar arrays on satellites.
  • High Efficiency: When combined with GaAs and Germanium layers, efficiencies can exceed 40%.
  • Miniaturization: High efficiency allows for smaller panels, crucial for CPV (Concentrated Photovoltaic) systems.

Epitaxial Growth Services

Since bulk InGaP wafers are not standard, UniversityWafer, Inc. offers Metal Organic Chemical Vapor Deposition (MOCVD) services to grow InGaP layers on GaAs or GaP substrates. We can customize:

  • Layer Thickness: From nanometers to microns.
  • Doping: N-type (Silicon) or P-type (Zinc/Carbon).
  • Structure: Complex HBT or Solar Cell stacks.

Have a custom structure? Contact our engineering team to discuss your epi-wafer requirements.