Sapphire Substrate Uses for Research and Development

University Wafer Silicon Wafers and Semicondcutor Substrates Services
University Silicon Wafer for Production

What Are Some Applications of Sapphire Wafers

Researchers use sapphire for various RF components for 5G.

Below is one specs researchers use.

4” Sapphire 0.380+/-0.03mm thick, 4” 100m

m diameter C Plane Sapphire, two polished surface. Standard TTV and BOW <20um,qty 7pcs on shelf - 1 week delivery

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Sapphire Windows for Terahertz Spectroscopy Experiments

Scientist: I am writing this mail on behalf of Ultrafast and Terahertz Lab, IISER Kolkata, India. We have been using sapphire substrates (ID:1251) from university wafer for our terahertz spectroscopy experiments and they work fine for our needs. Thank you for the best quality. 

The following item was used.

Sapphire Item #1251 50.8mm 430um DSP C-M plane 0.2 Deg

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Can you Deposit Metal Films on Sapphire Wafers?

Researcher Questions

We are wondering if your company can fabricate metal thin films on your sapphire wafers. We are looking for providers of thin films on sapphire of the general structure: sapphire (base) - metal M (5-20nm) - Au (500-1000 nm). here, a thin metal of element M (where M can be a range of different types of metal) of thickness 5-20nm, encapsulated by a thick layer of gold. the deposition needs to be done sequentially and immediately, so the metal M does not come into contact with ambient before being protected my the gold layer. we are looking for high purity metal depositions. another question we have is whether you have the capacity to deposit thin films of metallic borides or alternatively of elemental boron? this would also be of interest for us. 

Answer:

UniversityWafer, Inc. can deposit, by sputtering or Electron Beam Evaporation thin films of various metals (such as Ti, Fe, Cu, Ni, W, Cr) and then a film of Au.

In the EBEv equipment we can deposit on 4"Ø wafers layers of several different metals without having to open the reactor.
In the sputtering reactor we can do the same but we might be more limited as to our choice of targets.

The inner metal films should be at least 20nm thick to assure uniform covering of the substrate.

I think that depositing a film of Boron is not a problem although for sputtering we might not have such a target.

Metal Borides are not a fundamental problem provided they do not dissociate during EB evaporation, and not a problem for sputtering provided we have appropriate targets.

I do not know off-hand if there are any problems with the various metals adhering to Sapphire.

Minimum Order Quantity for each type of film structure is 8 of 4"Ø wafers for EVEv and either 1 or 22 4"Ø wafers for sputtering (depending on the reactor used).

We await your specifications

Wafers Quoted

  • Orientation:     <0001> (C-plane)
  • Dimension:        Dia. 2"x0.5 mm
  • Polishing:         Single side polished
  • Roughness: Front-side Ra<0.5nm, Back-side Ra<1um
  •  5~20um (Ti or Cr) + 100nm Au on Back-side

Sapphire Wafers as Gallium Arsenide Grind/Polish

Research clients have used 100mm sapphire wafers 800 micron thick. The researchers used the wafer as a backing wafer for GaAs grinding/polish process. Rest of the spec same as you standard product: 2562. C-M plane 0.2°, Double Side Polished, Micro-roughness: Ra<0.35nm, Primary flat length: 32.5±2.5mm. Warp<21um, TTV<16um. The resercher purchased the following item.

Sapphire Item #2562
100mm <0001> 650um DSP C-M plane 0.2°, Double Side Polished, Micro-roughness: Ra<0.35nm, Primary flat length: 32.5±2.5mm. Warp<21um, TTV<16um