Silicon Germanium (SiGe)
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SiGe Strained Silicon
Description Prime,Single crystal Silicon
Diameter 100mm, 150mm & 200mm
Thickness Semi Standard
Resistivity 1-100 Ohm.cm
Type P-type/N-type
Polish One side epi polished
Orientation (100)
Epitaxial layer
Composition SixGe1-x
Thickness Upon-requst
Dopant None
Stress state Strained/Relaxed
Silicon Germanium (SiGe)
SiGe strained silicon provides an alternative substrate for CMOS manufacturing using silicon. SiGe wafers are suitable for mixed-signal circuits.SiGe is much less expensive than Gallium Arsenide (GaAs) heterojunction technologies.
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