Silicon Germanium (SiGe) Wafers for Research & Production
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SiGe Strained Silicon
Description Prime,Single crystal Silicon
Diameter 100mm, 150mm & 200mm
Thickness Semi Standard
Resistivity 1-100 Ohm.cm
Type P-type/N-type
Polish One side epi polished
Orientation (100)
Epitaxial layer
Composition SixGe1-x
Thickness Upon-requst
Dopant None
Stress state Strained/Relaxed
Silicon Germanium (SiGe)
SiGe strained silicon provides an alternative substrate for CMOS manufacturing using silicon. SiGe wafers are suitable for mixed-signal circuits.SiGe is much less expensive than Gallium Arsenide (GaAs) heterojunction technologies.
Please let us know if you can use our SiGe specs or let us know if you have specs you would like us to quote.
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