Silicon Germanium (SiGe) Wafers for Research & Production

University Wafer Silicon Wafers and Semicondcutor Substrates Services
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Silicon Germanium (SiGe) Wafers

We have 100mm, 150mm and 200mm Silicon Germanium (SiGe) wafers. SiGe strained silicon provides an alternative substrate for CMOS manufacturing using silicon. SiGe wafers are suitable for mixed-signal circuits.SiGe is much less expensive than Gallium Arsenide (GaAs) heterojunction technologies.

Please let us know if you can use our SiGe specs or let us know if you have specs you would like us to quote.

Get Your SiGe Quote FAST!


SiGe Strained Silicon

Description Prime,Single crystal Silicon
Diameter 100mm, 150mm & 200mm
Thickness Semi Standard
Resistivity 1-100 Ohm.cm
Type P-type/N-type
Polish One side epi polished
Orientation (100)
Epitaxial layer
Composition SixGe1-x
Thickness Upon-requst
Dopant None
Stress state Strained/Relaxed

Silicon Germanium FAQs

Researcher SiGe Question:

Do you supply Si0.1Ge0.9 films on Si Substrates? I am looking for a 2µm thick relaxed film. If yes: Do you know the threading dislocation density on top of the Silicon Germanium SiGe-Film? Is possible to do epitaxy on top of this surface?

Silicon Germanium Answer:

2um thick "Si0.1Ge0.9" film with Ge composition too high and too thick,it not do able. 

2um thick Ge on Silicon wafer is ok to supply

What is the pricing on a 4" Silicon Germanium SiGe film?

Researcher Question:

What is the pricing on a 4" SiGe film, 50nm thick, on a Silicon Wafer? Would the price change if the SiGe film was 30nm or 20nm thick?, 50nm thick, on a Silicon Wafer? Would the price change if the SiGe film was 30nm or 20nm thick?


SiGe Film Answer:

Yes,the price will change a little while the SiGe film thickness changes,pls confirm the Ge composition and the order qty. per the item, after this,we shall give you a quote.

Is the Composition of Silicon Germanium (SiGe) Conrollable?

I was wondering is the composition of the thin film controllable? saying SiGe, Si3Ge1 and Si1Ge3.

I am interested in the product of SiGe on Si wafer. I was wondering is the composition of the thin film controllable? saying SiGe, Si3Ge1 and Si1Ge3. Can I get a quotation for the following wafers?

1 um thick SiGe film on Si wafer (4') *2
1 um thick Si3Ge1 film on Si wafer (4') *2
1 um thick Si1Ge3 film on Si wafer (4') *2
100 nm thick SiGe film on Si wafer (4') *2
100 nm thick Si3Ge1 film on Si wafer (4') *2
100 nm thick Si1Ge3 film on Si wafer (4') *2

If the composition is not controllable, please also send me a quotation for the following wafers.

10 um thick SiGe film on Si wafer *4
1 um thick SiGe film on Si wafer *4
100 nm thick SiGe film on Si wafer *4

Schematic apparatus of transient conductance measurement. The dc
voltage was applied to the samples. The transient current was measured by
1-GHz high-speed digital oscilloscope.

SiGe Thin Film Answer:

The composition is controllable, just "Si1Ge3" the Ge composition is high,the SiGe layer thickness can not achieve 100nm,what about "Si2Ge2"?

Si1Ge3, SiGe and Si3Ge means the Si/Ge ratio in the thin film is 1:3, 1:1 and 3:1 respectively. What's the thinnest thickness you can make? Actually we only need 1-2 pieces for each film.

Can you Depost Silicon Germanium (SiGe) film on Silicon wafer?

Researcher asks:

I wanted SiGe film on Silicon wafer, not Si-on-Ge-on-Silicon wafer. Different compositions means different concentrations of Ge in SiGe film. Please take a quick look at the paper attached in which they controlled the Ge concentration to 20, 40, 60 and 80%.

Si3Ge: concentration of Ge in SiGe film is 25%
SiGe: concentration of Ge in SiGe film is 50%
SiGe3: concentration of Ge in SiGe film is 75%

If 75% Ge is too high for your synthesis, 25 and 50% also work for us.
Hope this makes things clear.

, not Si-on-Ge-on-Silicon wafer. Different compositions means different concentrations of Ge in SiGe film. Please take a quick look at the paper attached in which they controlled the Ge concentration to 20, 40, 60 and 80%.

Si3Ge: concentration of Ge in SiGe film is 25%
SiGe: concentration of Ge in SiGe film is 50%
SiGe3: concentration of Ge in SiGe film is 75%

If 75% Ge is too high for your synthesis, 25 and 50% also work for us.

Hope this makes things clear.

Answer:

We have the following specs. Please fill out the form for pricing.

  1. Si3Ge: concentration of Ge in SiGe film is 25% , 400 nm thick SiGe film on Si wafer
  2. SiGe: concentration of Ge in SiGe film is 50% , 30 nm thick SiGe film on Si wafer
  3. SiGe3: concentration of Ge in SiGe film is 75%, 10 nm thick SiGe film on Si wafer

Do You have Undoped Silicon Germaium (SiGe) Wafers?

Researcher Question:

Do you have the following SiGe spec?

Si+2at%Ge wafers

Wafer diameter : 40- 50 mm
Type: n-type
Orientation [100]
Resistivity: more than 1000 ohm.cm (noncompensated)
Dopant: Phosphorus
Thickness: 0.5 mm
Two-side polished.

Answer:

Yes, we have:

Si+2at%Ge wafers,Si0.98Ge0.02 wafer
Wafer diameter : 100 mm
Type: n-type
Orientation [100]
Resistivity: more than 1000 ohm.cm (noncompensated)
Dopant: Phosphorus
Thickness: 0.5 mm
Two-side polished.

Please ask for pricing.

Could you send me p-SiGe Silicon Germanium wafer estimate?

Diamater: 100 mm, 150 mm
Resistivity: Boron heavily doped
Type: p-type
Composition: x=0.7, 0.6, 0.5
SiGe thickness: 100 nm or 200 nm
Dopant: Boron
Stress state: whatever

Answer Yes! We have the following:


Diameter 100+/-0.25mm
1# SiGe-on-Silicon Wafer,40% Ge Composition
Silicon Substrate
Description Prime,single crystal Silicon
Thickness 525+/-25um
Resistivity 1-10 Ohm.cm
Type P-type(Boron doped)
Polish One side epi polished
Orientation (100)
Si x Ge 1-x Epitaxial layer,x=0.6,1-x=0.4
Composition Si x Ge 1-x
Thickness 100nm
Dopant Boron
Stress state Relaxed

150mm SiGe/Silicon Wafer
2# SiGe-on-Silicon Wafer,40% Ge Composition
Silicon Substrate
Description Prime,single crystal Silicon
Diameter 150+/-0.25mm
Thickness 625/675+/-25um
Resistivity 1-10 Ohm.cm
Type P-type(Boron doped)
Polish One side epi polished
Orientation (100)
Si x Ge 1-x Epitaxial layer, x=0.6,1-x=0.4
Composition Si x Ge 1-x
Thickness 100nm
Dopant Boron
Stress state Relaxed

Do You Carry Silicon Germanium (SiGe) With an Epitaxial Layer

Researcher Question:

Do you have have SiGe with an epitaxial layer?

Answer:

Yes,We can supply Si/Ge 80/20 and 70/30 two different composition

4'' 100mm SiGe/Silicon Wafer

SiGe-on-Silicon Wafer,20% Ge Composition
Silicon Substrate
Description Prime,single crystal Silicon
Diameter 100+/-0.4mm
Thickness 500~550um
Resistivity 1-20 Ohm.cm
Type P-type(Boron doped)
Polish One side polished
Orientation (100)
Thermal Oxide layer 100nm

Si1-xGex Epitaxial layer,x=0.2,1-x=0.8
Composition Si1-xGex
Thickness 100nm
Dopant None
Stress state Relaxed

Could you please let me know the properties of the product that you have, Ge concentration and  price/wafer

Researcher Question:
I'm looking for silicon germanium wafers n-type (100) with different Ge concentration.

Answer:

We can supply SiGe with different of Ge concentration:

Diameter 50.8mm, 100mm and 150mm
Type : n-type (100) Silicon germanium
Resistivity: less than 0.1 ohm.cm
One side polished

Please send us your specs!

SiGe Layers can be customized to meet your specific research needs or compare high temperature SiGe to silicon based devices or integrated circuits for performance differences.

 

Silicon Germanium Alloys

Researchers have been using indirect bandgap semiconductor materials including cubic silicon (Si), germanium (Ge) and SiGe alloys to achieve efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys.

Please send us your specs for a quote.

Silicon Germanium (SiGe) Based Lasers

For decades researchers have worked hard to tfabricate SiGe based lasers that can seemlessly integrate into todays existing chips. This new technology has caught up to Indium Phosphide and Gallium Arsenide currently found in todays chip. The speeds of SiGe based devices could increase by 1000%.

We can provide Blue and Green color,the epi stack structure is "LED MQW epi structure / Silicon epitaxy / SiGe epitaxy / Silicon substrate " at least 3 mode of epi process. Price is dependent on quantity.

sige lasers for sattelite communications

Pelase send us your specs!

Polycrystalline Silicon Germanium

We can provide SiGe wafer 4'',6'' and 8'',the price depends on the final requirements. Please send us your specs and quantity for an immediate quote.

New SiGe Transistors Help Transfer Data at Record Speeds Using Light

Researchers from ETH have created a modulator that reduces signal loss during light to data transfer using Silicon Germanium transistors.

silicon germanium transistor converting light into data

Source: IEF/Springer Nature Ltd.

How would you compare and contrast silicon germanium and gallium arsenide as semiconductor material?

Silicon germanium (SiGe) is an alloy epitaxial wafer, it's has a higher cost for semiconductor IC, etc. Gallium arsenide (GaAs) is a lower cost substrate for LED, LD applications, or related epitaxial growth.

Silicon-Germanium Device Next Step to Fabricate Silicon-Based Lasers


When it comes to microelectronics, it is workhorse transistor technology that drives our information society. There are countless electronic devices we use in our daily lives, such as barcode scanners and laser pointers, that use a variety of semiconductors, from silicon germanium to Gallium Arsenide (GaAs), and so it seems natural to find ways to integrate these different functionalities. Of particular interest in this context are silicon-based components of the laser pointer, which are typically based on gallium arsenids (GaAs). Although a large number of high-performance, low-power silicon-based components can be manufactured today at very low cost, there are other areas where the properties of a semiconductor such as silicon are used technologically. Silicon is used in a wide range of applications, for example in the use of barcodes, scanners, lasers and pointers.

Unfortunately, the physical processes that generate light in GaAs do not work as well as they do in silicon, so finding alternative ways to realize a laser on silicon remains a prime and long-term goal. An international team led by researchers from the Department of Materials Science and Engineering at the University of Illinois at Urbana-Champaign presents an important step towards such a device in the Applied Physics Letters.

In addition, the observed emission is in the terahertz frequency band, which lies between microwave electronics and infrared optics and is of high current interest for a variety of applications. The semiconductor structure is based on GaAs, a material consisting of two different types of band gaps: direct and indirect. In the latter and the former, they are indirect, and electrons recombine in holes in GaAs a band gap, generating light and heat in silicon. Therefore, silicon is used to build a laser based on a GaAs template, as it has nothing to do with the fact that the material is much lighter than silicon and is therefore better suited for use in lasers, "reports the research team from the University of Illinois at Urbana - Champaign, University of Stuttgart.
Therefore, the laser's effect on silicon requires different paths, and its effect on GaAs also requires a different way.

QCLs achieve light emission by tunneling their electrons through a repetitive stack of precisely constructed semiconductor structures in which process potentials are released. The research on this new approach is similar to that of researchers at the Max Planck Institute of Quantum Optics in Garching and the University of California at Berkeley. They are working on the first silicon-based quantum cascade laser with GaAs as the primary material.

Although the QCL paradigm was first demonstrated in 1994 by a team led by Jerome Faist, who was then working at Bell Laboratories in the USA, it was the first time that it was demonstrated in silicon-based materials. The realization of these forecasts is part of an interdisciplinary project funded by the European Commission, bringing together leading experts, characterizing high-quality semiconductor materials and manufacturing them as components at the University of Glasgow. The ETH Group of Scalari and Faists is one of the largest and most advanced research groups in the world in this field.