Gallium Nitride on Silicon Epitaxial Wafers

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GaN on Silicon Epi-Wafer Benefits and Typical Applications

GaN on Si have high-uniformity and good repeatability with low leakage current with excellent 2DEG transport properties. GaN on Si are great for power HEMTs and low cost CMOS process. And the wafers are suitable for power diodes.

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What are Gallium Nitride on Silicon Epitaxial Wafers Applications?

Gallium Nitride (GaN) on Silicon Epitaxial Wafers combines the wide bandgap properties of GaN with the cost-effectiveness of silicon, enabling various high-performance applications. Here are some of the primary applications:

  1. Power Electronics: GaN on silicon wafers is highly suitable for high-voltage and high-power devices, like power converters, inverters, and power management integrated circuits (ICs). GaN's high breakdown voltage, fast switching speeds, and efficiency at high frequencies make it ideal for electric vehicles, data centers, renewable energy systems, and consumer electronics.

  2. RF and Microwave Devices: Due to its high electron mobility and saturation velocity, GaN is valuable in high-frequency applications. GaN-on-Silicon wafers are widely used in radio frequency (RF) amplifiers, particularly in 5G base stations, satellite communications, and radar systems.

  3. LEDs and Solid-State Lighting: GaN is foundational in LED technology due to its blue and UV light emission capabilities. GaN on silicon offers a more economical solution for producing LEDs, making it useful for displays, automotive lighting, and other solid-state lighting applications.

  4. Optoelectronics: GaN-on-Si wafers are also useful for various optoelectronic devices, such as laser diodes, photodetectors, and optical sensors. These are often used in data storage, optical communication, and imaging.

  5. Sensors: GaN on Silicon can also be used in harsh-environment sensors due to its thermal and chemical stability, especially where high temperatures or corrosive conditions are involved, such as in industrial, automotive, and aerospace applications.

By integrating GaN with silicon, manufacturers achieve a blend of performance benefits from GaN while leveraging the silicon infrastructure and cost advantages, particularly as GaN-on-Silicon technology continues to advance.

 

Gallium Nitride/ Silicon Epiwafers

Gallium Nitride (GaN) on Silicon (Si) substrates applications include next-generation ultra-thin-film semiconductors. Gallium Nitride EP wafers on SiC substrates Application GaN epitaxial wafers can be used as a substrate for III-V nitride epitaxial growth via MBE, MOCVD, and CVD. GaN epitaxial wafers are composite multi-layer (Al, In, Ga)n formations developed through metal-integrated chemical substance vapour deposition (MOCVD) processes, on either Silicon or Silicon Carbide (SiC) wafers. 

Features Overview Typical Applications
  • High Uniformity and Good Repeatability
  • Low RF Loss
  • 100mm and 150mm in stock
  • 5G and 6G Wireless Communications
  • Solid-State RF Energy Applications

Wafer Size and Epi-Structure

GaN cap layer Specification Values
AlGaN or InAlN Barrier Diameter 100mm / 150mm
GaN Channel Epi Thickness 2-3 Micron
(Al) Gan buffers (RF buffer) Bowing <= 30 micron
HR-Si (111) Substrate Sheet resistance <= 350 ohm-cm
  RF Loss <=0.2dB/mm@6GHz
Item Criteria Typical Condition
Crystal Quality of GaN Buffer (arcsec)
XRC FWHM(002) <=800 700 XRD
XRC FWHM(102) <=1200 900 XRD
2DEG Transport Properties
Mobility >=1800 1900 Hall
Concentration >=9E12 1E13 Hall
Rsh <=350 300 Hall
Wafer Profile and Surface Characteristics
Wafer Bow <=30mm <=20 PL mapping
Total Defect
Edge Crach <=3mm 1mm  
Scratch No No  
RMS@5x5 μm2 <=0.5nm 0.3nm AFM
       

Typical Characteristics Datasheet

typical gan characteristics

Al% Uniformity for AlGaN Wafer bowing mapping Sheet Resistance Mapping

 

Gallium Nitride/NPSS Epiwafers

Gallium Nitride operates at far higher voltages, frequencies, and temperatures than traditional semiconductor materials like silicon, enabling higher efficiency, smaller size, lighter weight, higher speed, and lower cost final products. The larger diameter of GaNs engineered substrate wafers allows for a larger number of viable GaN devices to be produced per wafer, thus leading to lower cost manufacturing. Since the GaN devices are using a standard silicon substrate, no cost savings are available when compared with Power MOSFET manufacturing at similar diameters as the substrate material. 

Features overview include:

  • High uniformity and good repeatability
  • Based on NPSS or AlN template

Wafer Size and Epi-Structure

Mesa depth 450nm    
p++ GaN Parameters Specification
p AlGaN Wafer Size 50.8mm
EBL Total Thickness 4.6~4.8um
MQWs XRC of AlN Template (002）：≤200 arcsec,（102）：≤300 arcsec
n AlGaN Concentration of n-AlGaN ≥1 E19/cm3
Transition Layer    
AlN on NPSS    

Optical Characteristics

Parameters Symbol Condition Unit Min Typ Max  
Output power Po 2020@100 Ma mW - >=10    
Wavelength Wp nm 270 275 280  
FWHM of PL peak Wh nm - 12 13  
Forward Voltage Vf V - 6 6.5  

Surface Defects

No. Parameters Criteria Typical Characteristics Datasheet
1. Edge Exclusion <=3mm

 

gan characteristics datasheet
2. Crack <=50
3. Haze None
4. Hillock <=100 ea@1mm2, 50 x optical microscope
5. Scratch None
6. Contamination None
7. Bowing <=150 micron

 

GaN Epi Wafers

Below are just some of Gallium Nitride Epitaxial Wafers that we have in stock. Please select the item(s) and quantity for an immediate quote, or send us your specs for a custom quote.

GaN-on-Sapphire Wafer Series Prime grade
Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2 <0001> 430+/-25um SSP,Flat Sapphire 800nm  N-type Un-doped </=25
2 <0001> 430+/-25um DSP,Flat Sapphire 800nm  N-type Un-doped </=25
2 <0001> 430+/-25um SSP,Flat Sapphire 5.0um  N-type Un-doped </=25
2 <0001> 430+/-25um SSP,Flat Sapphire 5.0um  N-type Si-doped </=25
2 <0001> 430+/-25um DSP,Flat Sapphire 5.0um N-type Si-doped </=25
2 <0001> 430+/-25um SSP,PSS Substrate 5.0um N-type Un-doped </=25
2 <0001> 430+/-25um SSP,PSS Substrate 4.0um N-type Si-doped </=25
2 <0001> 430+/-25um SSP,PSS Substrate 6.0um N-type Si-doped </=25
2 <0001> 430+/-25um Single Side Polished 4~5um Semi Insulating Fe-doped </=25
2 <0001> 430+/-25um Single Side Polished P 0.5/UID 2.0um P-type Mg-doped </=25
2 <0001> 430+/-25um Single Side Polished 5.0um  P-type Mg-doped </=25
2 <0001> 430+/-25um Double Side Polished 5.0um  P-type Mg-doped </=25
/              
4 <0001> 650+/-25um Single Side Polished 600nm N-type Un-doped </=25
4 <0001> 650+/-25um Single Side Polished 5.0um  N-type Un-doped </=25
4 <0001> 650+/-25um Double Side Polished 5.0um  N-type Un-doped </=25
4 <0001> 650+/-25um Single Side Polished 5.0um  N-type Si-doped </=25
4 <0001> 650+/-25um Double Side Polished 5.0um N-type Si-doped </=25
4 <0001> 650+/-25um SSP,PSS Substrate 5.0um N-type Si-doped </=25
/                
6 <0001> 1300+/-25um Single Side Polished 3.0um N-type Un-doped </=25
6 <0001> 1000+/-25um Single Side Polished 5.0um N-type Un-doped </=25
6 <0001> 1000+/-25um Single Side Polished 5.0um N-type Si-doped </=25
6 <0001> 1000+/-25um Double Side Polished 5.0um N-type Si-doped </=25
2~6 <0001> 430~1300+/-25um SSP / DSP LED epi structure 4~6um LED Epi Wafer Blue/Green </=25
2 <0001> 400+/-30um SSP / DSP GaN on GaN Substrate N/S.I N/S.I </=25

GaN-on-Silicon Wafer Series Prime grade
Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2 <111> 1000+/-25um P/E 100~5000nm N-type Un-doped </=25
4 <111> 525~1000+/-25um P/E 100~5000nm N-type Un-doped </=25
6 <111> 675~1000+/-25um P/E 100~5000nm N-type Un-doped </=25
8 <111> 725~1000+/-25um P/E 100~5000nm N-type Un-doped </=25
2~8 <111> 500~1000+/-25um P/E HEMT Structure GaN N/S.I-type S.I-doped </=25
4~6 <111> 500~1000+/-25um P/E Blue/Green LED GaN on Si N/P-type N/P-doped </=25
2~8 <111> 500~1000+/-25um P/E 100~500nm AlN S.I-type Un-doped </=25

GaN-on-Silicon Carbide (SiC) Wafer Series Prime grade
Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2 <0001> 350/500+/-25um  P/P 100~3000nm N/S.I-type Si/Fe  </=25
4 <0001> 350/500+/-25um  P/P 100~3000nm N/S.I-type Si/Fe  </=25
6 <0001> 350/500+/-25um  P/P 100~3000nm N/S.I-type Si/Fe  </=25

Bulk GaN Wafer Series Prime grade
Diameter Orient. Substrate Thickness Surface Finish GaN Template Thickness Conduction Type Dopant Quantity
2 <0001> 400+/-30um SSP / DSP Bulk GaN Wafer N/S.I N/S.I </=25
4 <0001> 600+/-30um SSP / DSP Bulk GaN Wafer N/S.I N/S.I </=25
2 <0001> 400+/-30um SSP / DSP GaN Epi on GaN Substrate N/S.I N/S.I </=25A38:M51A34:M51A30A7:M51