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We have both n-type and p-type. Our III-V wafers have high carrier mobilities and direct energy gaps.
second most common in use after silicon, commonly used as substrate for other III-V semiconductors, e.g. InGaAs and GaInNAs. Brittle. Lower hole mobility than Si, P-type CMOS transistors unfeasible. High impurity density, difficult to fabricate small structures. Used for near-IR LEDs, fast electronics, and high-efficiency solar cells. Very similar lattice constant to germanium, can be grown on germanium substrates.
Used in early low to medium brightness cheap red/orange/green LEDs. Used standalone or with GaAsP. Transparent for yellow and red light, used as substrate for GaAsP red/yellow LEDs. Doped with S or Te for n-type, with Zn for p-type. Pure GaP emits green, nitrogen-doped GaP emits yellow-green, ZnO-doped GaP emits red.
Used for infrared detectors and LEDs and thermophotovoltaics. Doped n with Te, p with Zn.
Commonly used as substrate for epitaxial InGaAs. Superior electron veloxity, used in high-power and high-frequency applications. Used in optoelectronics.
Used for infrared detectors for 1â€"3.8Â Âµm, cooled or uncooled. High electron mobility. InAs dots in InGaAs matrix can serve as quantum dots. Quantum dots may be formed from a monolayer of InAs on InP or GaAs. Strong photo-Denber emitter, used as aÂ terahertz radiation source.