What Are The Advantage and Disadvantages of MOCVD?

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Metal Organic Chemical Vapor Deposition Capabilities

UniversityWafer, Inc. has partners have very modern MOCVD facilities capable of achieving your specifications on background doping level and Epi layer thickness control. Pricing depends on the wafer size and quantity.

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The Advantages and Disadvantages of MOCVD

Metal Organic Chemical Vapor Deposition (MOCVD) is a mechanism of film deposition using chemical vapor deposition CVD is a coating process mainly used for thermal induced reactions at the surface of the heated substrate when seagent is used in their Mechanism in the following manner.

The deposition of highly uniform and their conducting thin film in the microelectronic are present on the miniaturization of semiconductor devices induced .D structure with a very high ratio.

Then forming silver films with the highest electrical conductivity and loest critical thickness are currently produced an lli surface of deposition surface.

Then we will use ultra-thin continuous silver oxide.

Finally follow the deposition of volmer weber growth.

MOCVD Advantages

These are a lot of advantages of Metal Organic chemical vapor deposition are:

  1. Thin film oxide deposition
  2. Design of improved precursons
  3. Lead based ferroelectric layers for uncooled thermal imagings
  4. Preparation of complex ferroelectric oxides.

MOCVD Disadvantages

Disadvantages of Metal Organic Chemical Vapor deposition are:

  1. MOCVD precursors are very very hazardous. They are also even toxic and torming by products of these precursors are toxic.
  2. They are also formed of highly toxic,hybride,gases due to formation of phosphine